Semiconductor News for Expert Witness and Consultant

• Apple’s iPhone 3G Semiconductor Parts

• VLSI 2008 Symposium Highlights

• Trends in the Wi-Fi industry - Michael Hurlson of Broadcom

• Trends in storage, the economy and network - LSI CEO Abhi Talwalkar

• Seagate Technology, the World's Largest Maker of Hard Disk Drives (HDDs) Sues STEC, a Small Solid-State Drives (SSD) Maker

• iPod Touch Components likely to be in Future of the iPod line - iSuppli Tear Down

• Faster SSD Appearing in the Market (estimate 200MB/sec)

• Current Status and the Future of DRAM and NAND Markets

• TSMC 40nm Process Expected in Second Quarter 2008

• Flash Memory and SSD Reliability - Comments by Intel and Samsung

• 2008 Semiconductor Industry Growth and 2007 Rankings and Revenues - iSuppli

• ISSCC 2008 Highlights

• Intel, Micron New ONFi 2.0 Interface Boost the Data Transfer Rate of NAND Flash-Memory 5x

• Reverse Engineering of iPhone Video

• Comparing iPhone, Blackberry, Sony Ericsson, and Motorola

• IC Semiconductor's 2008 Growth Forecasts for PCs, Memories, and Phones from Industry Strategy Symposium (ISS)

• Intel and STMicroelectronics Shipping a Functional Prototype of a Phase-Change Memory (PCM)

• IEDM 2007 Highlights

• Counterfeit Part's Impacts on the Semiconductor Industry

• Preliminary 2007 Global Semiconductor Market-Share

• Rambus Demonstrates Terabyte Memories Using Fast Channels

• IEDM Technical Program - 2007

• Chip Makers Must Shift from Fabs to Systems - Infineon CEO

• Intel's 45-nm High-k Metal-Gate Process

• Intel's 45-nm Process: High-k First, Metal-Gate-Last Integration

• Intel's High-k Dielectric and Metal Gate Process Solution

• iPhone Semiconductor Components

• LED Developments for Alternating Current (AC) LEDs in LCD Backlights and for Lighting Traffic Lights,  and Emergency Exit Signs.

• Shakeout Seen in Japan's IC Industry

• Flash Drive is Surpassing Hard Drive Usage in Portable Video Players

• Taiwan packaging and testing industry

• Comments About the Push to Reduce the Specifications for ESD in Digital ICs

• Benefits of Venture With Intel: Q&A with Bob Krysiak, VP of STMicroelectronics

• Intel, STMicroelectronics and Francisco Partners announce flash memory joint venture

• PC's Crashes Due to Single-bit DRAM Errors and Can be Solved Using ECC- According to Microsoft

• Infineon Launches CoolMOS - High-Voltage Power Transistors for High-End Power Supplies

• Fab Alliances for DRAM and Flash Wafer Production

• TI Focuses on Analog IC Manufacturing and Outsource Logic Manufacturing

• DDR3 New Product Validations, Shipments by Qimonda, Micron, Samsung, and Elpida

• Leading Chip Makers Push to Reduce the Specifications for ESD in Digital ICs

• Key Developments in Intel's Quad-core, Penryn, Silverthorne & Mobile Processors

• Flash NAND Drive's Demand for PC and Laptops - from iSuppli

• The Shifting Landscape of Inventory, Production, and Demand of NAND and DRAM

• TSMC Likely to Adopt Electron-Beam Direct Write as its Main Next-Generation Lithography Tool

• 2006 Semiconductor Mobile Phone Flash Market Share Ranking by Revenues

• ReadyBoost, ReadyDrive, and Embedded Flash on Motherboard are Flash Memory Applications Used in Microsoft's Vista

• Qimonda and Micron Technology Delivered Samples of Next-Generation DDR3 DRAM Ahead of Samsung Electronics

• Final 2006 Semiconductor Suppliers Market Share Ranking Released by iSuppli

• Hynix Introduces 512Mb Mobile DDR with ECC Support

• Is Upcoming iPhone Impacting NAND Flash Pricing?

• Samsung Electronics Announce Production of 1Gb DDR2 DRAM using 60nm Process - Integrating  recess channel array transistor (RCAT), metal-insulator metal (MIM) capacitors , and a selective epitaxial growth (SEG) technology.

• Update: Texas Instruments Going fabless and would Rely on Foundries for Digital Logic Processes Smaller than  45nm.

• U.S. Consumer  Electronic Spending Slowed in 2006 to Half the Growth Rate in 2005

• ISSCC News - Substantially Faster DRAM using SOI for Embedded Applications

• Hynix Upsets DRAM Ranking with a Remarkable Increase in Shipments and Rises to the Second Rank

• Intel, IBM, NEC announce Hi-k Metal gate Breakthrough

• Texas Instruments Going fabless and would Rely on Foundries for Digital Logic Processes Smaller than  45nm.

• Texas Instrument Switches to Applied Materials For 45-nm Low-k Dielectrics

• SanDisk Introduces 32GB SSD 1.8-inch Solid State Drive (SSD) as a Drop-in Replacement for the Standard Mechanical Hard Disk Drive

• IEDM News- NEC, Sony, Toshiba outline 45-nm Logic Process Advance - Integrating Strain Silicon, Low-k dielectric, and hybrid dual-damascene in Mosfet transistor.

• IEDM News - Samsung Introduced OneDRAM Fusion Memory Chip for Mobile Phones

• Vista will be Optimized using Hybrid Disk Drive (or HDD)

• Vista Operating System Increases Boot Up Speed by using USB Drive, External Memory Device (EMD), and Hybrid Hard Drive (HDD). This will Increase Flash NAND Memory Growth

• NAND Flash Market Will Slightly Exceed Forecasts in 4Q, According to iSuppli

• Qimonda Achieved the Strongest Growth Among the Top Five DRAM Suppliers in 3Q Global DRAM Market, per iSuppli

• Changes Seen for Chip Sales Rankings in '06 - Major Changes for Infineon Spin-off Qimonda, Renesas, NXP, ST, and Hynix

• First Implementation of High-k Dielectric Film for NAND will Grow High-k Market

• NEC High-Speed and Low-Power CMOS Circuit with Low-k Multilevel Copper Interconnect

•  Samsung New 50 nm 1-gigabit DDR2 with Multilevel Dielectric (ZrO2/Al2O3/ZrO2)  Layer Within the Selective Epitaxial Growth (SEG) Transistor

• IM Flash Technologies (Joint Venture of Micron Technology and Intel) ) Announce 4-Gbit NAND using 50-nanometer Three Metal and Triple-Poly CMOS Process

• New Flash Technologies- PRAM, FRAM, MRAM, and CTF (Charge Trap Flash using Tanos Dielectric)

• Samsung New 40 nm NAND Process with Charge Trap Flash (CTF) using Tanos Dielectric

• IBM, Chartered, Infineon and Samsung 45-nm Process with Copper Interconnects, Immersion Lithography, Low-k Dielectrics, and Strained Silicon

• Spansion Demos NROM Flash using MirrorBit Quad from Saifun IP

• STMicroelectronics Announces New 32-Mbit Flash Memory for Automotive Industry

• Automotive Electronics Future Trends for Micro, Memory, Logic ICs; Analog, Mixed Signal and Discrete Devices

• Mobile Phone Market Share Growth for Nokia, Motorola, Samsung, Sony, Ericsson, LG Electronics

• DSP  Continues to Exceed Other Micro-Logic Products, MPU, and MCU Market Growth

• Internet Protocol Television (IPTV) Subscriber Base set for Explosive Growth, says iSuppli

•  Cell Phone and MP3 Players Cause NAND to be History's Fastest-Growing IC Market

• PC Microprocessor's Core Logic Chipset Inventory Glut Looms Large over Electronics Supply Chain, says iSuppli

• Intel Introducing a Low Power Itanium Dual Core Microprocessor

• Non-Volatile MRAM Flash from Freescale, a Motorola Spinoff

• Flash Boom Driving Fab Equipment Demand - according to Applied Material CEO

• TI  Circuits Heavily Used in Nokia Cell Phones and Samsung Televisions

• 45nm CMOS Process With Strained SOI Substrates Demonstrated by Freescale 

• Texas Instruments Postpones High-k Dielectric For 45-nm Process

• VLSI Symposium to Mull 45-nm Process Challenges

• High-k Dielectric, Low-k Dielectrics Hit Roadblocks

• Low CMOS Capacity for Analog Power Management (PWM) IC Chips

• Mobile Phone Memory Competition Between NOR and NAND Flash

• Micron Converting Two Memory Fabs to Image Chip Production

• SOI (Silicon On Insulator) Wafer, Circuit, and Manufacturing Cost Issues

• Taiwan Semiconductor Manufacturing (TSMC) Introduces 45-nm Process with 10 Metal Layers, a Low-k Film, and Immersion Lithography (lito) 

• Samsung's Hybrid Flash (NAND) and Hard Disk Drive will come out in PCs in 2007

• Taiwan Semiconductor Manufacturing (TSMC) says Immersion Lithography (litho) Ready to Roll

• Revenue Growth and Market Share of DRAM and FLASH Memories

• Programming Non-Volatile Flash Memory

• Cell Phones to Utilize Hard Disk Drive Technology

• 2006 ISSCC Program

• NOR Flash Growth Rate and Market Share

• ISSCC News - Faster, More Reliable Multilevel Cell (MLC) Outshines Single-Bit Cell (SBC)

• ISSCC Cell Phone News- Combining DRAM and NAND Memories, Improving Programming

• Non-Volatile Flash Memory Programming Time Significantly reduced

• Polysilicon Antifuses Used in Intel's Dual Core Processor

• Flash Card Survives and Documents a Crash

• Micron CEO: Non-Volatile NAND Growth Mirrors DRAM Growth 20 Years Ago

• Hard Disk Drive vs. Flash Drive

• Intel's New Processe Lead to Relaxed Dimension Restrictions and UltraShallow Junctions

• When Will Non-Volatile Flash Volume Exceed DRAM Volume?

• Intel's 65nm Fabs and 45nm Fabs

• Intel's New 45nm Process

• International Technology Roadmap -Semiconductor

• Taiwan Moving Up Technology Food Chain

• Samsung Shift Capacity from DRAM to NAND Flash

• New 65nm Fabrication Processes for AMD and IBM

• A Flash USB Drive Plus Input/Output Devices Could be the Computer of Tomorrow

• 14 Million Flash Drives are not Enough for Steve Jobs

•  Flash Drive Speeds up Computer Turn on, Triples Battery Life, and Reduces Size

• Higher Fab Capacity for Flash, Lower Capacity for DRAM will Benefit Semiconductor Companies

• IEDM News - New Transistors, Heat Sinks, and Scaling

• IEDM News:  Latest Semiconductor Devices Processing 2006 .- Brute Scaling Not the Answer

• Faster, Instant-on Flash-Based Hard Drive - Developed by Samsung

• Samsung: 'Hybrid' Hard Drives Will Ship In 2006

• Flash Memory: Today the iPod, Tomorrow the World